意法半导体的高压驱动器设计用于优化矢量电机驱动系统,在高开关频率下实现了出色的性能,并且具有智能关断功能以保护最终应用。
smartDRIVETM IGTB和MOSFET驱动器整合了用于实现保护功能的比较器、用于电流感应的运算放大器和集成式阴极负载二极管,因此降低了整个系统的外部元件数量。

Powerful, rugged, and efficient: Get more power in smaller packages with STDRIVE

ST's new STDRIVE family of half-bridge MOSFET and IGBT gate drivers are designed to operate in harsh industrial environments withstanding high voltages up to 600 V, while maintaining good noise immunity and low switching losses.

L6491, L6494, and L6498 hagh-voltage half-bridge gate driversare particularly suited for medium- and high-capacity power switches thanks to their sink/source current capability up to 4 A.

An integrated bootstrap diode and comparator for fast protection against over-current and over-temperature conditions, as well as an independent UVLO protection circuit, make the application's PCB design simpler and more compact in addition to helping to reduce the overall bill of material.

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