STi²GaN*: a new Smart Power initiative based on GaN technology

Solutions based on wide bandgap semiconductors are fundamental to the development of highly efficient next-generation power systems which can positively contribute to a sustainable future. These solutions can accelerate the adoption of electric vehicles and renewable energy generation systems

Gallium Nitride (GaN)-based products deliver better energy efficiency and enable more compact designs of power supplies for a broad range of consumer, industrial, and automotive applications. As a relatively new technology GaN poses some  challenges for designers implementing GaN transistors. These include complex gate drive design and PCB layout limitations.

Building on our innovations in BCD Smart Power and other wide bandgap technologies such as silicon carbide (SiC), ST is developing a new generation of smart power integration to make design easier and bring more flexibility and performance for our customers.

STi2GaN is a product family that will allow designers to get the most out of GaN technology with a higher level of integration and performance. By combining the advantages of GaN technology with traditional semiconductor materials, a large variety of power applications will benefit in terms of size, performance and cost.

This includes applications such as wireless chargers, 48/12V bidirectional DC-DC converters, LiDAR, On-Board Chargers, Class-D amplifiers, and power supplies.


STi²GaN applications

Benefits of our STi²GaN technology

Standing for ST Intelligent and Integrated GaN, our STi²GaN technology leverages the benefits of gallium nitride (GaN) technology such as higher efficiency and higher frequency operation resulting in lower cooling requirements and smaller heat sinks in final applications.

Integration offers increased robustness and improved reliability with an extremely compact design at system level. ST's STi²GaN technology lets us provide two different levels of integration:


  • A unique solution that enables the creation of monolithic GaN power stages with driver and protection  
  • A System-in-Package (SiP) that makes the solution even “smarter” by implementing an advanced ST proprietary BCD process to create sophisticated control circuits, all embedded in an optimized bond-wire-free package.

 Optimized bond-wire-free packages

Innovative bond-wire-free package for even smarter System-in-Package solutions

Easily integrated into tomorrow's applications, STi²GaN helps to drastically increase operating frequencies (in the MHz range) for a compact, easier and cheaper design at system level. Furthermore, the innovative package is characterized by a drastic reduction of parasitic elements, which contributes to lower electromagnetic emissions (EMI), and improved thermal features thanks to the double-side cooling, further simplifying the choice of thermal dissipation strategy.

 Operating frequencies

Work with ST and benefit from our unique position in GaN technology

ST is the ideal partner to work with to take full advantage of the benefits of Integrated Power GaN solutions both in 100 V and 650 V clusters.

Based on our extensive experience in Smart Power solutions and Automotive applications, ST ensures that engineers can meet stringent design requirements and benefit from the highest standards in terms of usability, performance and reliability, also offering the proven know-how to help your engineering teams to qualify their solutions.


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