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STPOWER SiC MOSFET is the innovative solution for a more compact and efficient design, ST is extending the benefits of new wide bandgap materials to mass production. A wide voltage range selection is available 650V, 1200V and 1700V. STPOWER SiC MOSFETs feature very low on-state resistance RDS(on) and are suitable for different applications automotive and industrial. STPOWER SiC MOSFET is a qualified automotive grade and it’s compliant to AEC-Q101 requirements.

 

Main characteristics:

  • Very high temperature handling capability (max. TJ = 200 °C)
  • Significantly reduced switching losses (minimal variation versus temperature)
  • Low on-state resistance
  • Simple to drive
  • Very fast and robust intrinsic body