Leading-edge power technologies for both high-and low-voltage applications combined with a full package range and innovative die bonding technologies exemplify ST’s innovation in power transistors belonging to the STPOWER™ family.

ST offers a wide portfolio of power MOSFETs ranging from -100 to 1700 V, IGBTs with breakdown voltages ranging from 300 to 1250 V and power bipolar transistors ranging from 15 to 1700 V.

Due to the improved thermal design of ST's power electronics systems, our silicon-carbide (SiC) MOSFETs ensure good robustness thanks to the industry’s highest temperature rating of 200 °C and voltage ranging from 650 to 1700 V.

Our wide STPOWER™ product portfolio combined with state-of-the art packaging and protections for high reliability and safety helps designers find the right solutions for customized, high-efficiency applications that will last a long lifetime.

Wide bandgap transistors

Wide bandgap transistors


From 650 V to 1700 V SiC MOSFETs featuring the industry’s highest temperature rating of 200 °C and a very small variation of the RDS(on) even at high temperatures.

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Power MOSFETs

Power MOSFETs


Broad range of breakdown voltages from -100 V to 1700 V, with low gate charge and low on-resistance, combined with state-of-the art packaging.

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IGBTs

IGBTs


Breakdown voltages from 300 to 1250 V. Low VCE(SAT) for reduced conduction losses. Improved switch-off energy spread versus increasing temperature.

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Power Bipolar

Power bipolar


The range includes Darlington transistors and BJTs with a VCES from 15 to 1700 V.



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