The MDmesh™ DM2 series are ST's latest MOSFETs with fast recovery body diode, optimized for full-bridge phase-shifted ZVS topologies.
These 400 V - 650 V power MOSFETs feature a very low reverse recovery charge and time (Qrr, Trr) and show up to 40% lower RDS(on) compared to the previous generation. High dV/dt ruggedness (40 V/ns) allows reliable performance even when exposed to large voltage transients such as noise and harmonics on AC power lines. Our fast recovery diode MOSFETs belong to the STPOWER family.
Key features and benefits
- Improved intrinsic diode reverse recovery time (Trr) for increase efficiency
- Higher dV/dt capability for improved system reliability
- AEC-Q101-qualified 400 V, 500 V, 600 V and 650 V super-junction MOSFETs for automotive applications
Our wide STPOWER product portfolio, combined with state-of-the art packaging and protections for high reliability and safety, helps designers find the right solutions for customized, high-efficiency applications that will last a long lifetime.