The MDmesh™ DM6 super-junction power MOSFETs are ST's latest fast-recovery diode MOSFET series, optimized for full-bridge phase-shifted ZVS topologies.
These 600 and 650 V fast-recovery MOSFETs feature a very low recovery charge and time (Qrr, trr) and deliver up to 15% lower RDS(on) compared to the previous generation. High dV/dt ruggedness (50 V/ns) allows reliable performance even when exposed to large voltage transients such as noise and harmonics on AC power lines. These power MOSFETs belong to the STPOWER family.
STPOWER MOSFET key features and benefits
- Improved intrinsic diode reverse recovery time (Trr) for increased efficiency
- Higher dV/dt capability for improved system reliability
- AEC-Q101-qualified 600 V and 650 V fast-recovery MOSFETs for automotive applications
Two new 650V automotive-grade STPOWER MOSFETs in small SMD packages for more compact designs
ST extends its MDmesh DM6 series with two new 650V automotive-grade STPOWER MOSFETs in small SMD packages, enabling more compact designs, the STH30N65DM6-7AG in H2PAK- 7 and the STB30N65DM6AG in D2PAK. Featuring a very high dv/dt capability and an improved intrinsic diode, these AEC-Q101 rev D qualified MOSFETs are ideal for resonant and DC/DC converters.
Our wide STPOWER product portfolio, combined with state-of-the art packaging and protections for high reliability and safety, helps designers find the right solutions for customized, high-efficiency applications that will last a long lifetime.