Based on an optimized process layout, ST’s 36 & 50 V LDMOS transistors meet the stringent peak power (>1KW) and ruggedness requirements (>10:1 VSWR) of avionics and radar applications.
The ST air cavity (STAC®) package option features excellent thermal behavior and higher MTTF combined with improved RF performance (enhanced gain and PSAT) compared to ceramic devices.
Key features
- Applications: IFF, TCAS, ADS-B transponder, DME/TACAN, L&S Band radars
- Frequency bands
- 978 MHz
- 1030 to 1090 MHz
- 960 to 1215 MHz
- 1200 to 1400 MHz
- 2.7 – 3.1 GHz
- 3.1 – 3.5 GHz
- Supply voltage from 36 to 50 V
- Output power up to more than 1KW
- Gain >15 dB
- Efficiency >50%
- RF2L36075CF2 75 W, 28 V, 3.1 to 3.6 GHz RF power LDMOS transistor
- RF5L1214750CB4 750 W, 50 V, 1200 to 1400 MHz RF power LDMOS transistor
- RF5L0912750CB4 750 W, 50 V, 960 to 1215 MHz RF power LDMOS transistor
- STAC1011-500 500 W, 50 V, 700 to 1200 MHz RF power LDMOS transistor
- STAC1214-350 350 W, 50 V, 1200 to 1400 MHz RF power LDMOS transistor
- RF2L36040CF2 40 W, 28 V, 2.7 to 3.6 GHz RF power LDMOS transistor
- STAC1214-250 LDMOS L-band radar transistor
- STAC0912-250 LDMOS avionics radar transistor
- RF5L10111K0CB4 1000 W, 50 V, 1030 to 1090 MHz RF power LDMOS transistor
- STAC1011-350 LDMOS avionics radar transistor
