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  • The SD2931-10 is a gold metallized N-channel MOS field-effect RF power transistor. Being electrically identical to the standard SD2931 MOSFET, it is intended for use in 50 V dc large signal applications up to 230 MHz.

    The SD2931-10 is mechanical compatible to the SD2931 but offers in addition a better thermal capability (25 % lower thermal resistance), representing the best-in-class transistors for ISM applications, where reliability and ruggedness are critical factors.

    Key Features

    • Gold metallization
    • Excellent thermal stability
    • Common source configuration
    • POUT = 150 W min. with 14 dB gain @ 175 MHz
    • Thermally enhanced packaging for lower junction temperatures

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00 Files selected for download

Technical Documentation

    • Description Version Size Action
      DS1935
      RF power transistor: HF/VHF/UHF N-channel power MOSFETs
      10.0
      330.13 KB
      PDF
      DS1935

      RF power transistor: HF/VHF/UHF N-channel power MOSFETs

    • Description Version Size Action
      AN2027
      Mounting recommendations for ceramic DMOS packages
      2.4
      47.85 KB
      PDF
      AN2027

      Mounting recommendations for ceramic DMOS packages

HW Model, CAD Libraries & SVD

    • Description Version Size Action
      SD2931-10 ADS model 1.0
      284.92 KB
      ZIP

      SD2931-10 ADS model

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