Designed to meet high-reliability requirements in Space applications
ST's hi-rel and rad-hard bipolar transistors cover collector-emitter voltages up to 300 V and collector currents up to 5 A with linear hFE and low variation after radiation testing.
Both NPN and PNP devices are available in hermetic packages including surface-mount LCC-3, UB, SMD.5 and power through-hole TO-257AA. Dual NPN and PNP complementary pairs are also available in single LCC-6 and Flat-8 packages.
ST's high-reliability and radiation-hardened products are ESCC qualified and available in rad-hard versions with a Total Ionizing Dose (TID) radiation level up to 100 krad. Many devices are also available in a JANS version compliant to DLA standards.
ST is committed to further enlarge the product range targeting high efficient power conversion, electric propulsion and TWT cathode bias applications.
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2ST15300
Rad-Hard 300 V, 5 A NPN transistor
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2N2907AHR
Rad-Hard 60 V, 0.6 A PNP transistor
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2N2920AHR
Hi-Rel 60 V, 0.03A NPN dual matched transistor
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2N5551HR
Rad-Hard 160 V, 0.5 A NPN transistor
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2N3810HR
Rad-Hard 60 V, 0.05 A PNP dual matched transistor
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2N5401HR
Rad-Hard 150 V, 0.5 A PNP transistor
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2N5154HR
Rad-Hard 80 V, 5 A NPN transistor
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2N5153HR
Rad-Hard 80 V, 5 A PNP transistor
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2N3700HR
Rad-Hard 80 V, 1 A NPN transistor
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JANS2ST3360K
Hi-Rel NPN-PNP complementary transistors 60 V, 0.8 A
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2N2222AHR
Rad-Hard 50 V, 0.8 A NPN transistor
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2N2484HR
Hi-Rel NPN bipolar transistor 60 V, 0.05 A
