Rad-Hard Power MOSFETs

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Specifically designed for high-reliability and space applications, ST's Rad-Hard Power MOSFETs are available in both N- and P-channel versions and feature a range of breakdown voltages up to 100 V, drain current up to 48 A, maximum RDS(on) of 30 mΩ and a Total Ionizing Dose (TID) radiation level of 100 krad for P-channel and 50 krad for N-channel.

Manufactured using ST's unique STripFET™ process, these radiation-hardened products come in die and hermetic SMD.5 packages as well as through-hole TO-254AA and TO-257AA packages.

Designed and manufactured in Europe, they are  qualified according to the ESCC (European Space Components Coordination) specification system and are certified by the European Space Agency (ESA).

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