STPOWER SiC MOSFET是面向更紧凑和高效设计的创新型解决方案，而意法半导体正将新型宽带隙材料的优势扩展到大批量生产中。可从广泛的电压范围（650V、1200V和1700V）装置进行选择。STPOWER SiC MOSFET具有非常低的导通电阻RDS(on)，适用于不同的汽车和工业应用。STPOWER SiC MOSFET是合格的汽车级器件，符合AEC-Q101要求。
主要特性：
- 超高温处理能力（max.TJ = 200 °C）
- 显著降低开关损耗（随温度的变化降至最低）
- 低导通状态电阻
- 易于驱动
- 稳定的超快速本体
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SCTW100N120G2AG
Automotive-grade silicon carbide Power MOSFET 1200 V, 75 A, 30 mOhm (typ. TJ = 25 C) in an HiP247 package
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SCTW40N120G2VAG
Automotive-grade silicon carbide Power MOSFET 1200 V, 33 A, 75 mOhm (typ. TJ = 25 C) in an HiP247 package
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SCTW35N65G2VAG
Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ., TJ = 25 C) in an HiP247 package
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SCTH40N120G2V7AG
Automotive-grade silicon carbide Power MOSFET 1200 V, 33 A, 75 mOhm (typ. TJ = 25 C) in an H2PAK-7 package
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SCTH100N65G2-7AG
Automotive-grade silicon carbide Power MOSFET 650 V, 95 A, 20 mOhm (typ. TJ = 25 C) in an H2PAK-7 package
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SCT20N120AG
Automotive-grade Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 package
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SCTW100N65G2AG
Automotive-grade silicon carbide Power MOSFET 650 V, 100 A, 20 mOhm (typ. TJ = 25 C) in an HiP247 package
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SCT10N120AG
Automotive-grade Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package
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SCT1000N170AG
Automotive-grade silicon carbide Power MOSFET 1700 V, 7 A, 1.0 Ohm (typ., TJ = 25 C) in an HiP247 package
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SCT20N170AG
Automotive-grade silicon carbide Power MOSFET 1700 V, 43 A, 64 mOhm (typ., Tj = 25 C) in an HiP247 package
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SCTH35N65G2V-7AG
Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ. TJ = 25 C) in an H2PAK-7 package
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SCTWA35N65G2VAG
Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mOhm (typ., TJ = 25 C) in an HiP247 long leads package
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SCTW60N120G2AG
Automotive-grade silicon carbide Power MOSFET 1200 V, 52 A, 45 mOhm (typ., TJ = 25 C) in an HiP247 package
