标准Microwire EEPROM产品提供一个x8或x16存储器结构，存储密度可达16Kb。如需更高密度并提高设计灵活性，建议选择SPI产品。
所有产品都具有每字节高达4百万次、每设备超过1亿次写入/擦除，200年的数据保存时间。
使用资源中的IBIS和Verilog模型，缩短了开发时间。
标准串行EEPROM纳入意法半导体的10年长期供货计划。
-
M93C86-W
16 Kbit (8-bit or 16-bit wide) MICROWIRE serial access EEPROM
-
M93C56-R
2 Kbit (8-bit or 16-bit wide) MICROWIRE serial access EEPROM
-
M93C66-W
4 Kbit (8-bit or 16-bit wide) MICROWIRE serial access EEPROM
-
M93C86-R
16 Kbit (8-bit or 16-bit wide) MICROWIRE serial access EEPROM
-
M93C56-W
2 Kbit (8-bit or 16-bit wide) MICROWIRE serial access EEPROM
-
M93S66-W
4 Kbit (16-bit wide) MICROWIRE serial access EEPROM with block protection
-
M93C56-DRE
2-Kbit MICROWIRE bus EEPROM 105°C operation
-
M93C46-W
1 Kbit (8-bit or 16-bit wide) MICROWIRE serial access EEPROM
-
M93C76-R
8 Kbit (8-bit or 16-bit wide) MICROWIRE serial access EEPROM
-
M93S56-W
2 Kbit (16-bit wide) MICROWIRE serial access EEPROM with block protection
-
M93S46-W
1-Kbit MICROWIRE serial access EEPROM with block protection
-
M93C76-W
8 Kbit (8-bit or 16-bit wide) MICROWIRE serial access EEPROM
-
M93C66-R
4 Kbit (8-bit or 16-bit wide) MICROWIRE serial access EEPROM
