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意法半导体的高压驱动器设计用于优化矢量电机驱动系统,在高开关频率下实现了出色的性能,并且具有智能关断功能以保护最终应用。

smartSTDRIVE MOSFET和MOSFET驱动器 整合了用于实现保护功能的比较器、用于电流感应的运算放大器和集成式阴极负载二极管,因此降低了整个系统的外部元件数量。

Rugged, efficient gate drivers offer more power in small packages

ST’s new STDRIVE family of half-bridge MOSFET and IGBT gate drivers are designed to operate in harsh industrial environments withstanding high voltages up to 600 V, while maintaining good noise immunity and low switching losses. L6491, L6494, and L6498 high-voltage half-bridge gate drivers are particularly suited for medium- and high-capacity power switches thanks to their sink/source current capability up to 4 A.

The evaluation boards EVAL6494LEVAL6498L allow evaluating L6494 and L6498 high voltage, high and low-side 2 A gate drivers, designed to operate in harsh industrial environments withstanding high voltages up to 600 V, while maintaining good noise immunity and low switching losses.

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