The L6387E is a simple and compact high voltage gate driver, manufactured with the BCD™ “offline” technology, and able to drive a half-bridge of power MOSFET or IGBT devices. The high-side (floating) section is enabled to work with voltage rail up to 600 V. Both device outputs can independently sink and source 650 mA and 400 mA respectively and cannot be simultaneously driven high thanks to an integrated interlocking function.
The L6387E device provides two input pins and two output pins and guarantees the outputs toggle in phase with inputs. The logic inputs are CMOS/TTL compatible to ease the interfacing with controlling devices.
The L6387E features the UVLO protection on the VCCsupply voltage and integrates the bootstrap diode, allowing a more compact and reliable solution.
The device is available in a DIP-8 tube and SO-8 tube and tape and reel packaging options.
|型号||Package||Packing Type||Operating Temperature (°C) (min)||Operating Temperature (°C) (max)||Marketing Status||Unit Price (US$) *||Quantity||ECCN (EU)||ECCN (US)||Country of Origin||More info||Order from ST||Order from Distributors|
|L6387ED013TR||SO-8||Tape And Reel||-40||125||Active : Product is in volume production||0.499||1000||NEC||EAR99||CHINA||MORE INFO||获取样片 Add to cart||DISTRIBUTOR AVAILABILITY|
|L6387ED||SO-8||Tube||-40||125||Active : Product is in volume production||1.52||1000||NEC||EAR99||CHINA||MORE INFO||直接购买 Add to cart||DISTRIBUTOR AVAILABILITY|
|L6387E||DIP-8||Tube||-40||125||Active : Product is in volume production||0.499||1000||NEC||EAR99||-||MORE INFO||获取样片 Add to cart||DISTRIBUTOR AVAILABILITY|
|型号||Marketing Status||Package||Grade||RoHS Compliance Grade||Material Declaration**|
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.