功率晶体管

Leading-edge power technologies for both high-voltage and low-voltage applications combined with a full package range and innovative die bonding technologies exemplify ST’s innovation in power transistors. Our portfolio includes MOSFETs ranging from -100 to 1700 V, silicon carbide (SiC) MOSFETs featuring the industry’s highest temperature rating of 200 °C, IGBTs with breakdown voltages ranging from 300 to 1250 V and a wide range of power bipolar transistors.

Wide bandgap transistors

650 and 1200 V SiC MOSFETs featuring the industry’s highest temperature rating of 200 °C and a very small variation of the R_DS(on) even at high temperatures.

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