Automotive-grade N-channel 950 V, 4.3 Ohm typ., 2 A MDmesh K5 Power MOSFET in a DPAK package

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  • 这款超高压N-沟道功率MOSFET采用MDmesh™ K5技术进行设计。该技术以创新专有的垂直工艺为基础。因此,在要求高功率密度和高效率的应用中,导通电阻显著降低,并具有极低的栅极电荷。

    主要特性

    • 通过AEC-Q101认证
    • 业界领先的低RDS(on) x 面积
    • 业界出色的品质因数(FoM)
    • 极低的栅极电荷
    • 经过100%雪崩测试
    • 稳压保护

样片和购买

型号
Package
Packing Type
Marketing Status
Budgetary Price (US$)*
Quantity
ECCN (US)
Country of Origin
Order from Distributors
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STD3N95K5AG DPAK Tape And Reel
Active
0.78 1000 EAR99 CHINA Check Availability

Distributor availability ofSTD3N95K5AG

代理商名称
地区 库存 最小订购量 Third party link
DIGIKEY WORLDWIDE 2250 1 Order Now
MOUSER WORLDWIDE 606 1 Order Now

代理商库存报告日期: 2019-06-16

代理商名称

DIGIKEY

库存

2250

Min.Order

1

地区

WORLDWIDE Order Now

MOUSER

库存

606

Min.Order

1

地区

WORLDWIDE Order Now

代理商库存报告日期: 2019-06-16

Get sample

STD3N95K5AG

Package

DPAK

Packing Type

Tape And Reel

Unit Price (US$)

0.78*

Distributor availability ofSTD3N95K5AG

代理商名称
地区 库存 最小订购量 Third party link
DIGIKEY WORLDWIDE 2250 1 Order Now
MOUSER WORLDWIDE 606 1 Order Now

代理商库存报告日期: 2019-06-16

代理商名称

DIGIKEY

库存

2250

Min.Order

1

地区

WORLDWIDE Order Now

MOUSER

库存

606

Min.Order

1

地区

WORLDWIDE Order Now

代理商库存报告日期: 2019-06-16

Marketing Status

Active

Unit Price (US$)

0.78

Quantity

1000

ECCN (US)

EAR99

Country of Origin

CHINA

(*) Suggested Resale Price per unit (USD) for BUDGETARY USE ONLY. For quotes, prices in local currency, please contact your local ST Sales Office  or our Distributors

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技术文档

    • Description 版本 文档大小 Action
      DS12161
      Automotive-grade N-channel 950 V, 4.3 Ω typ., 2 A MDmesh™ K5 Power MOSFET in a DPAK package
      1.0
      816.76 KB
      PDF
      DS12161

      Automotive-grade N-channel 950 V, 4.3 Ω typ., 2 A MDmesh™ K5 Power MOSFET in a DPAK package

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      AN4250
      Fishbone diagram for power factor correction
      1.1
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      AN2842
      Paralleling of power MOSFETs in PFC topology
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      AN2344
      Power MOSFET avalanche characteristics and ratings
      1.3
      880.04 KB
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      AN4337
      The avalanche issue: comparing the impacts of the IAR and EAS parameters
      1.1
      347.01 KB
      PDF
      AN4250

      Fishbone diagram for power factor correction

      AN2842

      Paralleling of power MOSFETs in PFC topology

      AN2344

      Power MOSFET avalanche characteristics and ratings

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      The avalanche issue: comparing the impacts of the IAR and EAS parameters

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      TN1156
      Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products
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      TN1156

      Irradiated HV Power MOSFETs working in Linear Zone: a comparison of electro-thermal behavior with standard HV products

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      UM1575
      Spice model tutorial for Power MOSFETs
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      Spice model tutorial for Power MOSFETs

HW Model, CAD Libraries & SVD

    • Description 版本 文档大小 Action
      STD3N95K5AG PSpice model 1.0
      10.33 KB
      ZIP

      STD3N95K5AG PSpice model

出版刊物和宣传资料

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      800-1050V MDmesh™ K5 ST’s first super-junction VHV MOSFET Series 1.0
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      800-1700 V MDmesh K5: Very high voltage super-junction Power MOSFET series 1.0
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型号 Marketing Status Package Grade RoHS Compliance Grade Material Declaration**
STD3N95K5AG
Active
DPAK 汽车 Ecopack2

STD3N95K5AG

Package:

DPAK

Material Declaration**:

PDF XML

Marketing Status

Active

Package

DPAK

Grade

Automotive

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.