This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of very high frequency converters. Furthermore, a positive VCE(sat)temperature coefficient and very tight parameter distribution result in easier paralleling operation.
- High speed switching
- Tight parameters distribution
- Safe paralleling
- Low thermal resistance
- Short-circuit rated
- Ultrafast soft recovery antiparallel diode
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|型号||Marketing Status||General Description||Package||Grade||RoHS Compliance Grade||Material Declaration**|
|Trench gate field-stop IGBT, H series 600 V, 10 A high speed||D2PAK||工业||Ecopack2||
Package:Trench gate field-stop IGBT, H series 600 V, 10 A high speed
Trench gate field-stop IGBT, H series 600 V, 10 A high speed
(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.