This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT is the result of a compromise between conduction and switching losses, maximizing the efficiency of high switching frequency converters. Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in easier paralleling operation.
- High speed switching
- Tight parameters distribution
- Safe paralleling
- Low thermal resistance
- 6 μs short-circuit withstand time
- Very fast soft recovery antiparallel diode
- Lead free package
|60 A, 650 V field stop trench gate IGBT with very fast diode||TO-247||工业||Ecopack2|| |
Package:60 A, 650 V field stop trench gate IGBT with very fast diode
60 A, 650 V field stop trench gate IGBT with very fast diode
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