This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of very high frequency converters. Furthermore, a positive VCE(sat)temperature coefficient and very tight parameter distribution result in easier paralleling operation.
- High speed switching
- Tight parameters distribution
- Safe paralleling
- Low thermal resistance
- Short-circuit rated
- Ultrafast soft recovery antiparallel diode
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|型号||Marketing Status||General Description||Package||Grade||RoHS Compliance Grade||Material Declaration**|
|600 V, 20 A high speed trench gate field-stop IGBT||TO-3P||工业||Ecopack1||
Package:600 V, 20 A high speed trench gate field-stop IGBT
600 V, 20 A high speed trench gate field-stop IGBT
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