IGBT裸片

Leveraging its proprietary trench field-stop technology, ST offers bare die IGBTs for custom designs. For automotive products, the availability of KGD (known good die) testing equipment ensures a high degree of reliability and quality thanks to extensive testing and inspection.

ST’s KGD testing includes:

Die traceability (wafer lot, wafer number, die positioning inside wafer, and datalog)
Top side and back side 100% visual inspection
100% coverage of datasheet in terms of testing

ST is also available to create new IGBT die form products on request.
The bare die IGBTs are available in different packing options, such as wafers on sticky foil or sealed die in Tape & Reel.

STG35M120F3D7
1200 V, 35 A trench gate field-stop M series, low-loss IGBT die in D7 packing
STG25M120F3D7
1200 V, 25 A trench gate field-stop M series low-loss IGBT die in D7 packing
STG40M120F3D7
1200 V, 40 A trench gate field-stop M series low-loss IGBT die in D7 packing
STG10M65F2D7
Trench gate field-stop, 650 V, 10 A, low-loss M series IGBT die in D7 packing
STG200M65F2D8AG
Automotive-grade 650 V, 200 A trench gate field-stop M series IGBT die in D8 packing
STG75M120F3D7
1200 V, 75 A trench gate field-stop M series low-loss IGBT die in D7 packing
STG80H65FBD7
650 V, 80 A trench gate field-stop HB series high-speed IGBT die in D7 packing
STG30M65F2D7
Trench gate field-stop 650 V, 30 A low-loss M series IGBT die in D7 packing
STG75M120F3D8
1200 V, 75 A trench gate field-stop M series low-loss IGBT die in D8 packing
STG35M120F3D8
1200 V, 35 A trench gate field-stop M series, low-loss IGBT die in D8 packing
STG15M65F2D7
Trench gate field-stop 650 V, 15 A low-loss M series IGBT die in D7 packing
STG25H120F2D7
1200 V, 25 A trench gate field-stop H series IGBT die in D7 packing
STG8M120F3D7
1200 V, 8 A trench gate field-stop M series low-loss IGBT die in D7 packing
STG20M65F2D7
650 V, 20 A trench gate field-stop M series low loss IGBT in D7 packing
STG50M65F2D7
650 V, 50 A trench gate field-stop M series low-loss IGBT die in D7 packing