意法半导体利用其专有的沟槽场截止技术，提供适合定制设计的裸露晶片IGBT。对于汽车产品，KGD（已知良好晶片）测试设备可提供广泛的测试和检查，从而确保高可靠性和高品质。IGBT属于STPOWER系列。
意法半导体的KGD测试包括：
- 晶片可追溯性（晶圆批次、晶圆编号、晶片在晶圆内的位置以及目录）
- 100%目检顶侧和后侧
- 100%涵盖数据表中的测试
意法半导体还可按需制造新型IGBT晶片形式的产品。
裸露晶片IGBT提供不同的包装选项，例如，使用自粘箔纸包装晶圆或者采用卷带包装密封晶片。
我们种类繁多的STPOWER产品组合采用先进的封装和防护，提供高可靠性和安全性，帮助设计人员为客制化的高效应用（将具有很长的使用寿命）找到正确的解决方案。
精选 视频
-
STG35M120F3D7
1200 V, 35 A trench gate field-stop M series, low-loss IGBT die in D7 packing
-
STG25M120F3D7
1200 V, 25 A trench gate field-stop M series low-loss IGBT die in D7 packing
-
STG40M120F3D7
1200 V, 40 A trench gate field-stop M series low-loss IGBT die in D7 packing
-
STG10M65F2D7
Trench gate field-stop, 650 V, 10 A, low-loss M series IGBT die in D7 packing
-
STG200M65F2D8AG
Automotive-grade 650 V, 200 A trench gate field-stop M series IGBT die in D8 packing
-
STG75M120F3D7
1200 V, 75 A trench gate field-stop M series low-loss IGBT die in D7 packing
-
STG80H65FBD7
650 V, 80 A trench gate field-stop HB series high-speed IGBT die in D7 packing
-
STG30M65F2D7
Trench gate field-stop 650 V, 30 A low-loss M series IGBT die in D7 packing
-
STG75M120F3D8
1200 V, 75 A trench gate field-stop M series low-loss IGBT die in D8 packing
-
STG35M120F3D8
1200 V, 35 A trench gate field-stop M series, low-loss IGBT die in D8 packing
-
STG15M65F2D7
Trench gate field-stop 650 V, 15 A low-loss M series IGBT die in D7 packing
-
STG25H120F2D7
1200 V, 25 A trench gate field-stop H series IGBT die in D7 packing
-
STG8M120F3D7
1200 V, 8 A trench gate field-stop M series low-loss IGBT die in D7 packing
-
STG20M65F2D7
650 V, 20 A trench gate field-stop M series low loss IGBT in D7 packing
-
STG50M65F2D7
650 V, 50 A trench gate field-stop M series low-loss IGBT die in D7 packing
