意法半导体的IGBT系列产品的额定电压大于或等于1200 V，电流范围3至75A（*），能够以不同的分立封装应用于工作频率100 kHz以内的领域。高压IGBT属于STPOWER系列。高压沟槽场截止IGBT实现了业界最佳的静动态特性平衡，可保证175°C的最大工作结温、较长的短路耐受时间以及较宽的安全工作区（SOA），具有额外的坚固和可靠性。
STPOWER IGBT系列：
- IGBT M系列：1200 V，8 A至50 A，最短短路耐受时间为10 µs，针对最高20 kHz的电机和压缩机驱动进行优化。
- IGBT S系列：1200 V，15 A至40 A，最短短路耐受时间为10 µs，针对最高8 kHz的电机控制应用进行优化。
- IGBT H系列：1200 V，15 A至75（*）A，最短短路耐受时间为5 µs，针对最高100 kHz的高频应用进行优化，如太阳能逆变器、焊机和UPS。
- IGBT IH系列：1250 V至30 A，针对高达60 kHz的感应加热和软开关应用进行了优化。
我们种类繁多的STPOWER产品组合采用先进的封装和防护，提供高可靠性和安全性，帮助设计人员为客制化的高效应用（将具有很长的使用寿命）找到正确的解决方案。
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