概述
产品选择器
解决方案
Documentation
CAD Resources
工具与软件
eDesignSuite
开始

意法半导体的P沟道MOSFET产品组合通过增加沟槽栅极器件得到了扩展。这些新型STripFET MOSFET具有极低的导通电阻。采用超小型封装,专为便携应用设计。

我们的P沟道MOSFET产品组合的主要特点:

  • 超低的RDS(on),增强了应用的效率
  • 标准、逻辑和超级阈值,增强了设计的灵活性

此类P沟道功率MOSFET经过优化,可满足负载开关,线性稳压器和汽车应用的广泛设计要求。它们提供了多种小型封装选项,例如D2PAK, DPAK、TO-220、SO-8、SOT-223、SOT23-6L和PowerFLAT 2x2。

Automotive-grade p-channel MOSFETs

ST has extended its offering of automotive-grade MOSFETs with the introduction of two p-channel trench-based MOSFETs. Based on ST’s STripFET H6 and F6 technology respectively, the STD37P3H6AG (-30 V, standard level driven) and STD45P4LLF6AG (-40 V, logic level driven) are housed in a DPAK package. They help simplify circuitry while optimizing performance and component count in automotive applications such as high-side switches, reverse polarity protection and audio amplifiers.