N-channel 600 V, 0.031 Ohm typ., 68 A MDmesh M2 Power MOSFET in a TO247-4 package

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  • This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.

    主要特性

    • Excellent switching performance thanks to the extra driving source pin
    • Extremely low gate charge
    • Excellent output capacitance (COSS) profile
    • 100% avalanche tested
    • Zener-protected

样片和购买

产品型号
封装
包装类型
供货状态
预算价格(US$)
数量
ECCN (US)
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从分销商订购
从ST订购
STW70N60M2-4 TO247-4 Tube
批量生产
- - EAR99 CHINA 没有经销商,请联系我们的销售办事处

STW70N60M2-4

封装

TO247-4

包装类型

Tube

单价(US$)

*

供货状态

批量生产

单价(US$)

-

数量

-

ECCN (US)

EAR99

Country of Origin

CHINA

(*) 建议转售单价(美元)仅用于预算用途。如需以当地货币计价的报价,请联系您当地的 ST销售办事处 或我们的 经销商

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技术文档

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      DS11795
      N-channel 600 V, 0.03 Ω typ., 68 A MDmesh™ M2 Power MOSFET in a TO247-4 package
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      MDmesh™ M2: the new ST super-junction technology ideal for resonant topologies
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      Super-junction power device evolution: characteristics analysis and performance comparison between MDmesh M2 and MDmesh M6 technologies
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      AN4337
      The avalanche issue: comparing the impacts of the IAR and EAS parameters
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      AN4250

      Fishbone diagram for power factor correction

      AN4829

      Fishbone diagrams for a forward converter

      AN4720

      Half bridge resonant LLC converters and primary side MOSFET selection

      AN4742

      MDmesh™ M2 EP: an additional improvement to MDmesh™ M2 ST Super-Junction Technology

      AN4406

      MDmesh™ M2: the new ST super-junction technology ideal for resonant topologies

      AN2842

      Paralleling of power MOSFETs in PFC topology

      AN2344

      Power MOSFET avalanche characteristics and ratings

      AN5318

      Super-junction power device evolution: characteristics analysis and performance comparison between MDmesh M2 and MDmesh M6 technologies

      AN4337

      The avalanche issue: comparing the impacts of the IAR and EAS parameters

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出版刊物和宣传资料

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      500/650 V MDmesh™ M2 1.0
      1.03 MB
      PDF
      600/650 V MDmesh™ M2 1.0
      788.16 KB
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      600/650 V MDmesh™ M2

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产品型号 供货状态 封装 等级规格 符合RoHS级别 材料声明**
STW70N60M2-4
批量生产
TO247-4 工业 Ecopack2

STW70N60M2-4

Package:

TO247-4

Material Declaration**:

PDF XML

Marketing Status

批量生产

Package

TO247-4

Grade

Industrial

RoHS Compliance Grade

Ecopack2

(**) The Material Declaration forms available on st.com may be generic documents based on the most commonly used package within a package family. For this reason, they may not be 100% accurate for a specific device. Please contact our sales support for information on specific devices.