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ST is pursuing the development of wide bandgap transistors with silicon carbide (SiC) MOSFETs being the first members of this family of high-efficiency products.

Some features of SiC MOSFETs include:

  • Industry’s highest temperature rating of 200 °C
  • Superior switching performance in all temperature ranges compared to the best-in-class IGBTs
  • Very low RDS(on) * area values even at high temperatures as compared to silicon super junction MOSFETs

These improvements translate into benefits such as simplified thermal design of power electronic systems (reduced cooling requirements) as well as BOM cost reduction, thanks to the trim down of passive components.


New 650 V, 22 mΩ typ (at 150 °C) SiC power MOSFET

ST has extended its portfolio of SiC MOSFETs with the introduction of the 22 mΩ typ (at 150 °C), 650 V SCTW100N65G2AG which increases the electrical efficiency of EVs and hybrid vehicles. When used in the EV/HEV main inverter, it increases the efficiency by up to 3% compared with an equivalent IGBT solution, translating into longer battery life and a lighter power unit. ST’s SiC MOSFETs also feature the industry’s highest junction-temperature rating of 200°C and show a very small variation of the on-state resistance even at high temperatures. This leads to higher system efficiency, which reduces cooling requirements and PCB form factors simplifying thermal management.
The new 650 V SiC MOSFET is currently sampling to lead customers and will soon complete the qualification to AEC-Q101.

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