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射频晶体管

 

Manufactured using an optimized process layout designed to improve RF performance, ST's radio frequency transistors exhibit outstanding RF gain and power saturation, higher breakdown voltage, improved ruggedness and reliability (higher MTTF), resulting in high-performance and cost-effective solutions.

With more than 35 years’ experience, ST offers a broad portfolio of RF power products operating from 7 to 100 V and for applications ranging from 1 MHz to 4 GHz such as:

  • Industrial, Scientific & Medical (ISM)
  • FM & TV Broadcast
  • Land Mobile – Commercial & Public Safety
  • Aerospace & Defense
  • Telecom & Satellite Communications

Several package options are available, from SMD plastic to ceramic and ST’s innovative STAC® air cavity package featuring 25% lower thermal resistance, improved RF performance and best-in-class reliability.

In addition to a wide range of evaluation boards, ST offers several software simulators and analysis tools to help engineers quickly get their designs to market.

RF DMOS

Wide bandgap transistors

Featuring the best-in-class 50/100V products portfolio operating up to 250MHz for ISM applications.

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RF LDMOS

Wide bandgap transistors

Broad range of supply voltage & output power from 7V to 50V and from 1W to >1KW up to 4GHz

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