意法半导体的28-50V LDMOS晶体管面向工作频率高达3.8 GHz的应用，在上一代LDMOS的基础上大幅改进了RF性能（+4 dB的增益、+15%的效率）、耐用性（>20:1 VSWR）和可靠性。由于提供陶瓷封装和低成本PowerSO-10RF塑料封装选项，它们是中继器、基站、政府宽带通信等应用的理想之选。
主要特性
- 工作频率最高3.8GHz
- 输出功率从几瓦到400 W
- 效率 >60%
- 高增益和线性
- 耐用性：>20:1 VSWR全相（CW）
- 以晶片形式提供
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ST50V10100
RF Power LDMOS transistor for frequencies up to 1.5 GHz
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LET9120
RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs
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ST9060C
RF Power LDMOS transistor HF up to 1.5 GHz
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PD57060S-E
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
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ST9045C
RF Power LDMOS transistor HF up to 1.5 GHz
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LET9045C
RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs
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SD57030
RF power transistor, the LdmoST family
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ST16045
45 W, 28 V RF Power LDMOS transistor from 0.7 to 1.7 GHz
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PD57018-E
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
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SD57030-01
RF power transistor, the LdmoST family
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ST05250
250 W, 28/32 V RF Power LDMOS transistor from HF to 1 GHz
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ST36015
20 W, 28 V, 0.7 to 3.6 GHz RF power LDMOS transistor
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LET9045F
RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs
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ST50V10200
RF Power LDMOS transistor HF to 1.5GHz
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SD57060
RF power transistor, the LdmoST plastic family
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SD56060
RF power transistor from the LdmoST family of N-channel enhancement-mode lateral MOSFETs
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SD57045-01
RF power transistor, the LdmoST family
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SD57045
RF power transistor, the LdmoST family
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RF3L05150CB4
150 W, 28/32 V RF power LDMOS transistor from HF to 1 GHz
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ST16010
10 W, 28 V RF Power LDMOS transistor from HF to 1.6 GHz
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STAC9200
200 W, 32 V HF to 1.3 GHz LDMOS transistor in a STAC package
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PD57030-E
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
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PD57045-E
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
