意法半导体的28-50V LDMOS晶体管面向工作频率高达3.8 GHz的应用，在上一代LDMOS的基础上大幅改进了RF性能（+4 dB的增益、+15%的效率）、耐用性（>20:1 VSWR）和可靠性。由于提供陶瓷封装和低成本PowerSO-10RF塑料封装选项，它们是中继器、基站、政府宽带通信等应用的理想之选。
主要特性
- 工作频率最高3.8GHz
- 输出功率从几瓦到400 W
- 效率 >60%
- 高增益和线性
- 耐用性：>20:1 VSWR全相（CW）
- 以晶片形式提供
- ST50V10100 RF Power LDMOS transistor for frequencies up to 1.5 GHz
- ST9060C RF Power LDMOS transistor HF up to 1.5 GHz
- PD57060S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
- RF2L42008CG2 8 W, 28 V, 0.7 to 4.2 GHz RF power LDMOS transistor
- ST9045C RF Power LDMOS transistor HF up to 1.5 GHz
- SD57030 RF power transistor, the LdmoST family
- RF3L05250CB4 250 W 28/32 V RF power LDMOS transistor from HF to 1 GHz
- RF3L05400CB4 400 W 28/32 V RF power LDMOS transistor from HF to 1 GHz
- ST16045 45 W, 28 V, 0.7 to 1.7 GHz RF Power LDMOS transistor
- PD57018-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
- RF2L27015CG2 15 W, 28 V, 0.7 to 2.7 GHz RF power LDMOS transistor
- SD57030-01 RF power transistor, the LdmoST family
- RF2L27025CG2 25 W, 28 V, 0.7 to 2.7 GHz RF power LDMOS transistor
- ST05250 250 W, 28/32 V RF Power LDMOS transistor from HF to 1 GHz
- ST36015 20 W, 28 V, 0.7 to 3.6 GHz RF power LDMOS transistor
- ST50V10200 200 W, 50 V, HF to 1.5GHz RF Power LDMOS transistor
- SD56060 60 W, 28 V, HF to 1 GHz RF power LDMOS transistor
- SD57045-01 RF power transistor, the LdmoST family
- SD57045 RF power transistor, the LdmoST family
- RF3L05150CB4 150 W, 28/32 V, HF to 1 GHz RF power LDMOS transistor
- ST16010 10 W, 28 V, HF to 1.6 GHz RF Power LDMOS transistor
- RF3L05200CB4 200 W 28/32 V RF power LDMOS transistor from HF to 1 GHz
- PD57030-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
- PD57045-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
- RF2L15200CB4 200 W, 28 V, HF to 1.5 GHz RF power LDMOS transistor
- RF5L15030CB2 30 W, 50 V, HF to 1.5 GHz RF power LDMOS transistor