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ST’s 28 to 50 V LDMOS transistors targeting operation up to 3.8 GHz feature a significant improvement in terms of RF performance (+4 dB gain, +15% efficiency), ruggedness (>20:1 VSWR) and reliability compared to the previous LDMOS generation. Available in both ceramic packages and in the cost-effective PowerSO-10RF plastic package, they are ideal for applications such as repeaters, base stations and government wideband communications.

Key features

  • Operating frequency up to 3.8GHz
  • Output power from few watts up to 400 W
  • Efficiency >60%
  • High gain and linearity
  • Ruggedness: >20:1 VSWR all phases (CW)
  • Available in die form

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