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  • The PD20010-E is a common source N-Channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD20010-E boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD20010-E’s superior linearity performance makes it an ideal solution for car mobile radio.

    The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly.

    主要特性

    • Excellent thermal stability
    • Common source configuration
    • POUT = 10 W with 11 dB gain @ 2 GHz / 13.6 V
    • Plastic package
    • ESD protection
    • In compliance with the 2002/95/EC European directive

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    • 描述 版本 文档大小 操作
      DS6165
      RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs
      2.1
      235.22 KB
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      DS6165

      RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

    • 描述 版本 文档大小 操作
      AN1294
      PowerSO-10RF: the first true RF power SMD package
      3.2
      1.01 MB
      PDF
      AN1294

      PowerSO-10RF: the first true RF power SMD package

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