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  • The PD55015-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. The PD55015-E boasts the excellent gain, linearity and reliability thanks to ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, the PowerSO-10RF.

    The PD55015-E’s superior linearity performance makes it an ideal solution for car mobile radios.
    The PowerSO-10RF plastic package is designed for high reliability, and is the first JEDEC-approved, high power SMD package from ST. It has been optimized for RF requirements and offers excellent RF performance and ease of assembly.
    Mounting recommendations are provided in application note AN1294, available on www.st.com.

    主要特性

    • Excellent thermal stability
    • Common source configuration
    • POUT =15 W with 14dB gain @ 500 MHz/12.5 V

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    • 产品型号

      30 W, 155 - 165 MHz evaluation board based on PD55015-E

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技术文档

    • 描述 版本 文档大小 操作
      DS4866
      RF power transistor from the LdmoST plastic family of N-channel enhancement-mode lateral MOSFETs
      3.1
      495.05 KB
      PDF
      DS4866

      RF power transistor from the LdmoST plastic family of N-channel enhancement-mode lateral MOSFETs

    • 描述 版本 文档大小 操作
      AN1294
      PowerSO-10RF: the first true RF power SMD package
      3.2
      1.01 MB
      PDF
      AN1294

      PowerSO-10RF: the first true RF power SMD package

硬件型号、CAD库及SVD

    • 描述 版本 文档大小 操作
      PD55015-E ADS model 1.0
      349.45 KB
      ZIP
      PD55015S-E ADS model 1.0
      352.84 KB
      ZIP

      PD55015-E ADS model

      PD55015S-E ADS model

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