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  • The PD85015-E is a common source N-channel, enhancement-mode, lateral field-effect RF power transistor. It is designed for high gain, broadband, commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. The PD85015-E boasts excellent gain, linearity and reliability thanks to ST's latest LDMOS technology mounted on the first true SMD plastic RF power package, the PowerSO-10RF. The superior linearity of the device makes it an ideal solution for car radios. The PowerSO-10 plastic package, designed for high reliability, is the first JEDEC approved, high power SMD package from ST. It is optimized for RF requirements, and offers excellent RF performance and ease of assembly.

    主要特性

    • Excellent thermal stability
    • Common source configuration
    • POUT = 15 W with 16 dB gain @ 870 MHz / 13.6 V
    • Plastic package
    • ESD protection
    • In compliance with the 2002/95/EC European directive

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技术文档

    • 描述 版本 文档大小 操作
      DS5731
      RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs
      4.1
      249.16 KB
      PDF
      DS5731

      RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

    • 描述 版本 文档大小 操作
      AN1294
      PowerSO-10RF: the first true RF power SMD package
      3.2
      1.01 MB
      PDF
      AN1294

      PowerSO-10RF: the first true RF power SMD package

硬件型号、CAD库及SVD

    • 描述 版本 文档大小 操作
      PD85015-E ADS model 1.0
      1.14 MB
      ZIP

      PD85015-E ADS model

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