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碳化硅(SiC)器件

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Silicon carbide - The latest breakthrough in high-voltage switching and rectification

ST’s portfolio of silicon carbide (SiC) devices incluses STPOWER SiC MOSFETs ranging from 650 to 1700 V with the industry’s highest junction temperature rating of 200 °C for more efficient and simplified designs, and STPOWER SiC diodes ranging from 600 to 1200 V which feature negligible switching losses and 15% lower forward voltage (VF) than standard silicon diodes. Check our Innovation and Technology page about SiC

Click below to play our video, and here to read our blog article.

  
STPOWER SiC MOSFET
SiC MOSFET

Main characteristics:

  • Automotive-grade (AG) qualified devices
  • Very high temperature handling capability (max. Tj = 200 °C)
  • Very low switching losses (minimal variation versus temperature) allowing to work at very high switching frequency
  • Low on-state resistance over the temperature range
  • Simple to drive
  • Very fast and robust intrinsic body diode proved

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