意法半导体的碳化硅二极管电压范围为600至1200 V（单二极管和双二极管），具有无与伦比的反向恢复特性和更出色的VF。它们有多种封装，从D²PAK到TO-247以及绝缘的TO-220AB/AC，为设计者们提供了极大的灵活性，具有高效、稳定和快速投放市场等优势。
意法半导体的SiC肖特基二极管展示出显著的功耗降低能力，通常用于硬开关应用，如高端服务器和电信供电，此外，它还用于太阳能逆变器、电机驱动器和无中断供电 (UPS)。
意法半导体的车规级650 V和1200 V碳化硅二极管（通过AEC-Q101认证且支持PPAP）具有市面上最低的前向压降 (VF)，可在电动车辆 (EV) 应用中提供最优效率。
主要特性：
- 电源转换器效率高（得益于较低的前向导通和开关损耗）
- 采用双二极管，功率集成度高，可减小PCB外形尺寸
- 电源转换器尺寸明显缩小，成本显著降低
- EMC影响小，可简化认证过程并缩短产品上市时间
- 天然的高稳健性，可确保极高的可靠性
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High efficiency 3-phase PFC with SiC devices & digital control
特别推荐
1200 V SiC diodes deliver superior efficiency and robustness
Our range of 1200 V silicon-carbide (SiC) JBS (Junction Barrier Schottky) diodes meets designers' needs for superior efficiency, low weight, small size, and improved thermal characteristics for performance-oriented applications.
Offering the best-in-class forward voltage (lowest VF) and state-of-the-art robustness, our 1200 V SiC diodes provide extra freedom to achieve high efficiency and reliability with lower current rating and therefore lower cost, while reducing operating temperature and extending application lifetime. They ensure a perfect fit in every switch mode converter and inverter - SMPS, UPS, solar, motor drives- where extreme power density and efficiency are needed.
Covering current ratings from 2 to 40 A, our 1200 V SiC diode family includes industrial-dedicated as well as automotive-qualified devices in surface-mount DPAK HV (high-voltage) and D²PAK, or through-hole TO-220AC and TO-247LL (long-lead) packages.
ST's 1200V SiC allows reaching the highest standards and smallest form factor.
